SSM3K44MFV 2009-05-27 1 n t 1 2 3 1 2 3 toshiba field effect transisto r silicon n channel mos type SSM3K44MFV high speed switching applications analog switch applications ? compact package suitable for high-density mounting ? low on-resistance : r ds(on) = 4.0 ? (max) (@v gs = 4 v) : r ds(on) = 7.0 ? (max) (@v gs = 2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 100 drain current pulse i dp 200 ma drain power dissipation (ta = 25 c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm) marking equivalent circuit handling precaution when handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricit y. operators should wear anti-static cl othing, and containers and other objects that come into direct contact with devic es should be made of anti-static materials. unit: mm jedec D jeita D toshiba 2-1l1b weight: 1.5 mg (typ.) 1. gate 2. source 3. drain vesm 1.20.05 0.320.05 1 2 3 0.4 0.4 0.220.05 0.80.05 0.80.05 1.20.05 0.50.05 0.130.05 0.5mm 0.45mm 0.45mm 0.4mm
SSM3K44MFV 2009-05-27 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 14 v, v ds = 0 v ? ? 1 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 v 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.8 ? 1.5 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 25 ? ? ms i d = 10 ma, v gs = 4 v ? 2.2 4.0 drain-source on-resistance r ds (on) i d = 10 ma, v gs = 2.5 v ? 4.0 7.0 input capacitance c iss ? 8.5 ? reverse transfer capacitance c rss ? 5.3 ? output capacitance c oss v ds = 3 v, v gs = 0 v, f = 1 mhz ? 9.4 ? pf turn-on time t on ? 50 ? switching time turn-off time t off v dd = 5 v, i d = 10 ma, v gs = 0 to 5 v ? 200 ? ns switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration when using the device. (c) v out t on 90% 10% 0 v 5 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 5 v d.u. 1% input: t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd output input 5 v 0 10 s 50 r l
SSM3K44MFV 2009-05-27 3 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) 0 ? 25 0.4 2 50 150 125 0 0.2 1.2 1.6 75 1 common source i d = 0.1 ma v ds = 3 v 0.8 1.8 25 100 0.6 1.4 drain-source voltage v ds (v) i d ? v ds drain current i d (ma) 0 0 100 250 12 1.5 0.5 50 150 200 v gs = 2.1 v 2.3 2.5 2.7 common source ta = 25c 3 4 10 drain-source on-resistance r ds (on) ( ) gate-source voltage v gs (v) r ds (on) ? v gs 0 0 2 6 410 8 2 1 4 5 6 3 25c ta =100c ? 25c common source i d = 10 ma drain-source on-resistance r ds (on) ( ) ambient temperature ta (c) r ds (on) ? ta 0 ? 25 2 8 50 150 125 0 1 5 6 75 4 4 v v gs = 2.5 v common source i d = 10 ma 3 7 25 100 gate-source voltage v gs (v) i d ? v gs drain current i d (ma) 0.01 0 1 1000 24 3 1 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c drain current i d (ma) r ds (on) ? i d drain-source on-resistance r ds (on) ( ) 4 v vgs = 2.5 v 0 0 4 10 80 200 160 40 2 6 8 120 common source ta = 2 5 c
SSM3K44MFV 2009-05-27 4 ambient temperature ta (c) p d ? ta drain power dissipation p d (mw) 0 0 100 250 160 40 50 150 200 20 60 80 100 140 120 mounted on fr4 board (25.4 mm 25.4 mm 1.6mm, cu pad: 0.585 mm 2 ) drain current i d (ma) ? y fs ? ? i d forward transfer admittance ? y fs ? (ms) 1 1 10 30 1000 100 1000 10 100 3 5 50 300 500 common source v ds = 3 v ta = 25c drain-source voltage v ds (v) i dr ? v ds drain reveres current i dr (ma) 0 100 250 50 150 200 0 ? 1.4 ? 0.4 ? 0.2 ? 0.6 ? 0.8 ? 1 ? 1.2 common source v gs = 0 v ta = 25c g d s i dr switching time t (ns) drain current i d (ma) t ? i d 10 0.1 100 300 10000 1000 100 1 10 30 50 500 3000 5000 common source v dd = 3 v v gs = 0 to 2.5 v ta = 2 5 c t r t on t f t off capacitance c (pf) drain-source voltage v ds (v) c ? v ds 0.1 0.1 1 3 100 10 100 1 10 0.3 0.5 5 30 50 common source v gs = 0 v f = 1 mhz ta = 25c c rss c oss c iss drain current i d (ma) t ? i d switching time t (ns) 10 0.1 100 300 10000 1000 100 1 10 30 50 500 3000 5000 common source v dd = 5 v v gs = 0 to 5 v ta = 25c t r t on t f t off
SSM3K44MFV 2009-05-27 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? 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